Features: · High breakdown voltage, high reliability.· Fast switching speed.· Wide ASO.· Adoption of MBIT process.· Micaless package facilitating mounting.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 800 V Collector-to-Emitter Vol...
2SC4459: Features: · High breakdown voltage, high reliability.· Fast switching speed.· Wide ASO.· Adoption of MBIT process.· Micaless package facilitating mounting.PinoutSpecifications Parameter Symbol...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 800 | V | |
Collector-to-Emitter Voltage | VCEO | 500 | V | |
Emitter-to-Base Voltage | VEBO | 7 | V | |
Collector Current | IC | 10 | A | |
Collector Current (Pulse) | ICP | PW300s, duty cycle10% | 20 | A |
Base Current | IB | 3 | A | |
Collector Dissipation | PC | 3 | W | |
Tc=25°C | 50 | W | ||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 500 |
IC [A] | 10 |
PC Tc=25°C [W] | 50 |
Electrical characteristics | |
---|---|
hFE (1) min | 15 |
hFE (1) max | 50 |
VCE [V] | 5 |
IC [A] | 0.8 |
hFE (2) min | 8 |
VCE [V] | 5 |
IC [A] | 4 |
fT typ [MHz] | 18 |
VCE [V] | 10 |
IC [A] | 0.8 |
tf max [µs] | 0.3 |