TRANS NPN 800VCEO 3A TOP-3F
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Series: | - | Manufacturer: | Panasonic Electronic Components - Semiconductor Products | ||
Transistor Type: | NPN | Current - Collector (Ic) (Max): | 3A | ||
Voltage - Collector Emitter Breakdown (Max): | 800V | Capacitance : | 4 pF | ||
Resistor - Base (R1) (Ohms): | - | Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 160mA, 800mA | ||
Current - Collector Cutoff (Max): | - | Resistor - Emitter Base (R2) (Ohms): | - | ||
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 800mA, 5V | Power - Max: | 3W | ||
Frequency - Transition: | 10MHz | Mounting Type: | Through Hole | ||
Package / Case: | TOP-3F | Supplier Device Package: | TOP-3F-A1 |
Parameter |
Symbol |
Rating |
Unit | |
Collector to base voltage |
VCBO |
900 |
V | |
Collector to emitter voltage |
VCES VCEO |
900 800 |
V | |
Emitter to base voltage |
VEBO |
7 |
V | |
Peak collector current |
ICP |
5 |
A | |
Collector current |
IC |
3 |
A | |
Base current |
IB |
1 |
A | |
Collector power dissipation | TC=25°C Ta=25°C |
PC |
70 3 |
W |
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
−55 to +150 |
Parameter |
Symbol |
Rating |
Unit | |
Collector to base voltage |
VCBO |
900 |
V | |
Collector to emitter voltage |
VCES VCEO |
900 800 |
V | |
Emitter to base voltage |
VEBO |
7 |
V | |
Peak collector current |
ICP |
5 |
A | |
Collector current |
IC |
3 |
A | |
Base current |
IB |
1 |
A | |
Collector power dissipation | TC=25°C Ta=25°C |
PC |
70 3 |
W |
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
−55 to +150 |
The 2SC4420 is a kind of silicon NPN triple diffusion planar type. It is used for high breakdown voltage high-speed switching. It has the following features: (1) high-speed switching; (2) high collector to base voltage; (3) wide area of safe operation; (4) satisfactory linearity of forward current transfer ratio; (5) full-pack package which can be installed to the heat sink with one screw.
What comes next is the absolute maximum ratings of 2SC4420 at TC is 25 . (1): collector to base voltage (VCBO) is 900 V, collector to emitter voltage (VCEO) is 800 V and emitter to base voltage (VEBO) is 7 V; (2): peak collector current (ICP) is 5 A; (3): collector current (IC) is 3 A; (4): collector power dissipation (PC) is 70 W at TC is 25 and is 3 W at TA is 25 ; (5): junction temperature (Tj) is 150 ; (6): storage temperature (Tstg) is from -55 to 150 . Then is about the electrical characteristics at TC is 25 . (1): the maximum collector cutoff current (ICBO) is 50 A when VCB is 900 V and IE is 0; (2): the maximum base to emitter saturation voltage is 1.5 V at IC is 0.8 A and IB is 0.16 A; (3): the typical transition frequency of 2SC4420 is 10 MHz at VCE is 5 V, IC is 0.15 A and f is 1 MHz; (4): the typical turn-on time is 0.7 s, storage tome is 2.5 s and fall time is 0.3 s at IC is 0.8 A and VCC is 250 V.
Technical/Catalog Information | 2SC4420 |
Vendor | Panasonic - SSG |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 800V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 70W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 160mA, 800mA |
Frequency - Transition | 10MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TOP-3F |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2SC4420 2SC4420 |