Features: · High fT (fT=1.2GHz typ).· High breakdown voltage (VCBO=100V, VCEO=80V).· Large current (IC=500mA).· Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V).· Adoption of FBET process.Application· Wide-band amplifiers.Specifications Parameter Symbol Conditions Ratings Unit C...
2SC4411: Features: · High fT (fT=1.2GHz typ).· High breakdown voltage (VCBO=100V, VCEO=80V).· Large current (IC=500mA).· Small reverse transfer capacitance (Cre=3.8pF/ VCB=30V).· Adoption of FBET process.App...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 100 | V | |
Collector-to-Emitter Voltage | VCEO | 80 | V | |
Emitter-to-Base Voltage | VEBO | 3 | V | |
Collector Current | IC | 500 | mA | |
Collector Current (Pulse) | ICP | 1.0 | A | |
Collector Dissipation | PC | 1.75 | W | |
Tc=25°C | 15 | W | ||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |