Features: `Adoption of MBIT process.`High DC current gain (hFE=800 to 3200).`Large current capacity (IC=2A).`Low collector-to-emitter saturation voltage (VCE(sat) 0.3V).`High VEBO (VEBO 15V).PinoutSpecifications Absolute maximum ratings VCEO [V] 10 VEBO [V] 15 IC [A] 2 ...
2SC4390: Features: `Adoption of MBIT process.`High DC current gain (hFE=800 to 3200).`Large current capacity (IC=2A).`Low collector-to-emitter saturation voltage (VCE(sat) 0.3V).`High VEBO (VEBO 15V).PinoutS...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 10 |
VEBO [V] | 15 |
IC [A] | 2 |
PC [W] | 1.3
When mounted on glass epoxy substrate |
Electrical characteristics | |
---|---|
hFE min | 800 |
hFE max | 3200 |
VCE [V] | 2 |
IC [mA] | 500 |
VCE (sat) typ [V] | 0.11 |
VCE (sat) max [V] | 0.3 |
IC [mA] | 1000 |
IB [mA] | 20 |
Parameter |
Symbol |
Rating |
Unit |
Collector-Base Voltage |
VCBO |
20 |
V |
Collector-Emitter Voltage |
VCEO |
10 |
V |
Emitter-Base Voltage |
VEBO |
15 |
V |
Collector Current |
IC |
2 |
A |
Collector current (pulse) |
ICP |
4 |
A |
Base current |
IB |
0.4 |
A |
Collector dissipation |
PC |
500 |
mW |
Junction Temperature |
Tj |
150 |
|
Storage Temperature |
Tstg |
-55 to +150 |