Features: • High fT : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• Low Cre : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz)• High |S21e|2 : 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• Super Mini Mold Package. (EIAJ: SC-70)Specifications Parameter Symbol ...
2SC4228: Features: • High fT : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)• Low Cre : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz)• High |S21e|2 : 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, ...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
20 |
V |
Collector-emitter voltage |
VCEO |
10 |
V |
Emitter-base voltage |
VEBO |
1.5 |
V |
Collector current |
IC |
35 |
A |
Collector power dissipation |
PT |
150 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-55to+150 |
°C |
The 2SC4228 is a low supply voltage transistor designed for VHF,UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied super mini mold package.
This is achieved by direct nitride passivated base surface process (NESATTM process) which is an NEC proprietary fabrication technique.