2SC4226-T1 R24

The 2SC4226-T1 R24 is designed as one kind of NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.2 dB Typ. @VCE = 3V, IC= 7 mA, f = 1.0 GHz;(2)High gain: 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.

The absolute maximum ratings of the 2SC4226-T1 R24 can be summarized as:(1)Collector to base voltage: 20 V;(2)Collector to emitter voltage: 12 V;(3)Emitter to base voltage: 3.0 V;(4)Collector current (DC): 100 mA;(5)power dissipation: 150 mW;(6)Junction temperature: 150 ;(7)Storage temperature range: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 1.0 uA;(2)Emitter cutoff current: 1.0 uA;(3)DC current gain: 40 to 250;(4)Insertion power gain: 7 to 9 dB;(5)Noise figure: 1.2 to 2.5 dB;(6)Reverse transfer capacitance: 0.7 to 1.5 pF;(7)Transition frequency: 3.0 to 4.5 GHz. If you want to know more information about the 2SC4226-T1 R24, please download the datasheet in www.seekic.com or www.chinaicmart.com .