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2SC4225

Features: Low Noise and High GainNF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHzS21e2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHzSpecificationsCollector to Base Voltage VCB0...................... 25 VCollector to Emitter Voltage VCE0 ..................12 VEmitter to Base Voltage VEB0 .....

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SeekIC No. : 004222819 Detail

2SC4225: Features: Low Noise and High GainNF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHzS21e2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHzSpecificationsCollector to Base Voltage VCB0.................

2SC4225 Data Sheet

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Part Number:
2SC4225
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Low Noise and High Gain
NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz


Specifications

Collector to Base Voltage VCB0...................... 25 V
Collector to Emitter Voltage VCE0 ..................12 V
Emitter to Base Voltage VEB0 .......................3.0 V
Collector Current IC ....................................70 mA
Total Power Dissipation PT .......................160 mW
Junction Temperature Tj........................... 150 °C
Storage Temperature Tstg.... 65°C to +150 °C


Description

The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band.

It has large dynamic range and good current characteristics.



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