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2SC4207

Application• Small package (dual type)• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)• High hFE: hFE = 120~700• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)• Complementary to 2SA1618Specifications Characteristic Symb...

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2SC4207: Application• Small package (dual type)• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)• High hFE: hFE = 120~700• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE...

2SC4207 Data Sheet

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Part Number:
2SC4207
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Application

• Small package (dual type)
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• High hFE: hFE = 120~700
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1618


Specifications

Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
(Note 1)
300
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
−55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating




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