2SC4177L6

The 2SC4177L6 is designed as one kind of NPN silicon epitaxia device that has some points of features:(1)High dc current gain; (2)High voltage.

The absolute maximum ratings of the 2SC4177L6 can be summarized as:(1)Collector-base voltage: 60 V;(2)Collector-emitter voltage: 50 V;(3)Emitter-base voltage: 5.0 V;(4)Collector current: 100 mA;(5)Total power dissipation: 0.15 W;(6)Junction temperature: 150 ;(7)Storage temperature: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 0.1 uA;(2)Emitter cutoff current: 0.1 uA;(3)DC current gain: 90 to 600;(4)Collector-emitter saturation voltage: 0.15 to 0.3 V;(5)Base-emitter saturation voltage: 0.86 to 1.0 V;(6)Base emitter voltage: 0.55 to 0.65 V;(7)Gain bandwidth product: 250 MHz;(8)Output capacitance: 3.0 pF. If you want to know more information about the 2SC4177L6, please download the datasheet in www.seekic.com or www.chinaicmart.com .