2SC4177-T1 L6

The 2SC4177-T1 L6 is designed as one kind of NPN silicon epitaxial transistor that has two points of features:(1)High dc current gain;(2)High voltage.

The absolute maximum ratings of the 2SC4177-T1 L6 can be summarized as:(1)Collector to base voltage: 60 V;(2)Collector to emitter voltage: 50 V;(3)Emitter to base voltage: 5.0 V;(4)Collector current (DC): 100 mA;(5)power dissipation: 150 mW;(6)Junction temperature: 150 ;(7)Storage temperature range: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 0.1 uA;(2)Emitter cutoff current: 0.1 uA;(3)DC current gain: 90 to 600;(4)Insertion power gain: 7 to 9 dB;(5)Collector-emitter saturation voltage: 0.15 to 0.3 V;(6)Base-emitter saturation voltage: 0.86 to 1.0 V;(7)Base emitter voltage: 0.55 to 0.65 V;(8)Gain bandwidth product: 250 MHz;(9)Output capacitance: 3.0 pF. If you want to know more information about the 2SC4177-T1 L6, please download the datasheet in www.seekic.com or www.chinaicmart.com .