Features: ·High breakdown voltage. (BVCEO = 120V)·Low collector output capacitance. (Typ. 20pF at VCB = 10V)· High transition frequency. (fT = 80MHz)·Complements the 2SB1236.Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitt...
2SC4132: Features: ·High breakdown voltage. (BVCEO = 120V)·Low collector output capacitance. (Typ. 20pF at VCB = 10V)· High transition frequency. (fT = 80MHz)·Complements the 2SB1236.Specifications Pa...
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Parameter |
Symbol |
Rating |
Unit | |
Collector-base voltage |
VCBO |
120 |
V | |
Collector-emitter voltage |
VCEO |
120 |
V | |
Emitter-base voltage |
VEBO |
5 |
V | |
Collector current |
IC |
2
|
A | |
ICP |
3 |
A*1 | ||
Collector power dissipation |
2SC4132 |
PC |
0.5 |
W |
2 *2 | ||||
2SD1857 |
1 *3 | |||
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
−55 to +150 |
°C |
The 2SC4132 is designed as one kind of power transistor (120V, 1.5A) device that has four points of features:(1)High breakdown voltage. (BVCEO = 120V); (2)Low collector output capacitance (Typ. 20pF at VCB = 10V); (3)High transition frequency (fT = 80MHz); (4)Complements the 2SB1236.
The absolute maximum ratings of the 2SC4132 can be summarized as:(1)Collector to base voltage: 120 V;(2)Collector to emitter voltage: 120 V;(3)Emitter to base voltage: 5.0 V;(4)Collector current (DC): 2 A;(5)power dissipation: 500 mW;(6)Junction temperature: 150 ;(7)Storage temperature range: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: 120 V;(2)Collector-emitter breakdown voltage: 120 V;(3)Emitter-base breakdown voltage: 5 V;(4)Collector cutoff current: 1 uA;(5)Emitter cutoff current: 1 uA;(6)Collector-emitter saturation voltage: 2 V;(7)DC current transfer ratio: 82 to 390;(8)Transition frequency: 80 MHz;(9)Output capacitance: 20 pF. If you want to know more information about the 2SC4132, please download the datasheet in www.seekic.com or www.chinaicmart.com .