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2SC4102W

Features: ·Excellent hFE linearity.·Power dissipation:PCM=200mWSpecifications Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Colle...

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2SC4102W: Features: ·Excellent hFE linearity.·Power dissipation:PCM=200mWSpecifications Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Colle...

2SC4102W Data Sheet

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Part Number:
2SC4102W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 ·Excellent hFE  linearity. 
 ·Power dissipation:PCM=200mW 
 


Specifications

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

50

mA

PC

Collector Dissipation

200

mW

Tj ,Tstg

Junction and Storage Temperature

-55~150




Description

 2SC4102W,NPN Silicon Epitaxial Planar Transistor.     


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