2SC4100

The 2SC4100 is designed as one kind of Silicon NPN Epitaxial device that has some points of features:(1)High voltage and high current: VCEO = 50 V, IC = 150 mA (max); (2)Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ); (3)High hFE: hFE = 70 700; (4)Low noise: NF = 1dB (typ.), 10dB (max); (5)Small package.

The absolute maximum ratings of the 2SC4100 can be summarized as:(1)Collector to base voltage: 60 V;(2)Collector to emitter voltage: 50 V;(3)Emitter to base voltage: 5.0 V;(4)Collector current (DC): 0.15 A;(5)power dissipation: 100 mW;(6)Junction temperature: 125 ;(7)Storage temperature range: -55 to +125 .

The electrical characteristics of this device can be summarized as:(1)Collector cut-off current: 0.1 uA;(2)Emitter cut-off current: 0.1 uA;(3)DC current gain: 70 to 700;(4)Collector-emitter saturation voltage: 0.1 to 0.25 V;(5)Transition frequency: 80 MHz;(6)Collector output capacitance: 2.0 to 3.5 pF;(7)Collector-emitter on resistance: 1.0 to 10 dB. If you want to know more information about the 2SC4100, please download the datasheet in www.seekic.com or www.chinaicmart.com .