2SC4097 T106R

The 2SC4097T106R is designed as one kind of medium power transistor (32V, 0.5A) device that has some points of features:(1)High ICMax. ICMax. = 0.5A; (2)Low VCE(sat). Optimal for low voltage operation; (3)Complements the 2SA1577. And the structure of this device is Epitaxial planar type NPN silicon transistor.

The absolute maximum ratings of the 2SC4097T106R can be summarized as:(1)Collector to base voltage: 40 V;(2)Collector to emitter voltage: 32 V;(3)Emitter to base voltage: 5.0 V;(4)Collector current (DC): 0.50 A;(5)power dissipation: 150 mW;(6)Junction temperature: 150 ;(7)Storage temperature range: -55 to +150 .

The electrical characteristics of 2SC4097T106R can be summarized as:(1)Collector cut-off current: 40 V;(2)Collector-emitter breakdown voltage: 32 V;(3)Emitter-base breakdown voltage: 5 V;(4)Collector cutoff current: 1 uA;(5)Emitter cutoff current: 1 uA;(6)DC current transfer ratio: 120 to 390;(7)Collector-emitter saturation voltage: 0.6 V;(8)Transition frequency: 250 MHz;(9): 6.5 pF. If you want to know more information about the 2SC4097T106R, please download the datasheet in www.seekic.com or www.chinaicmart.com .