Features: • Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz• High Power Gains S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHzSpecifications Parameter Symbol Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Vo...
2SC4093: Features: • Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz• High Power Gains S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHzSpecifications Parameter ...
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Parameter | Symbol | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 20 | V |
Collector-to-Emitter Voltage | VCEO | 12 | V |
Emitter-to-Base Voltage | VEBO | 3.0 | V |
Collector Current | IC | 100 | A |
Total Power Dissipation | PT | 200 | W |
Junction Temperature | Tj | 150 | °C |
Storage Temperature | Tstg | --55 to +150 | °C |
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
2SC4093 has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain.