2SC4083T106P

Transistors Bipolar (BJT) NPN 11V 50MA

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SeekIC No. : 00208335 Detail

2SC4083T106P: Transistors Bipolar (BJT) NPN 11V 50MA

floor Price/Ceiling Price

US $ .07~.32 / Piece | Get Latest Price
Part Number:
2SC4083T106P
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.32
  • $.19
  • $.12
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 11 V
Emitter- Base Voltage VEBO : 3 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 82 at 5 mA at 10 V Configuration : Single
Maximum Operating Frequency : 3200 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-70
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SC-70
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 0.05 A
Collector- Emitter Voltage VCEO Max : 11 V
Maximum Operating Frequency : 3200 MHz
DC Collector/Base Gain hfe Min : 82 at 5 mA at 10 V


Description

The 2SC4083T106P is designed as one kind of high-frequency amplifier transistor (11V, 50 mA, 3.2 GHz) device that has three points of features such as (1)High transition frequency (Typ. fT= 1.5GHz); (2)Small rbb Cc and high gain (Typ. 4ps); (3)Small NF.

The absolute maximum ratings of the 2SC4083T106P can be summarized as:(1)Collector-base voltage: 20 V;(2)Collector-emitter voltage: 11 V;(3)Emitter-base voltage: 3 V;(4)Collector current: 50 mA;(5)Junction temperature: 150 °C;(6)Storage temperature: -55 °C to +150 °C. If you want to know more information such as the electrical characteristics about the 2SC4083T106P, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SC4083T106P
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)11V
Current - Collector (Ic) (Max)50mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 10mA
Frequency - Transition3.2GHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SC4083T106P
2SC4083T106P
2SC4083T106PCT ND
2SC4083T106PCTND
2SC4083T106PCT



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