2SC4081F

      The 2SC4081F is NPN Silicon General Purpose Transistor.The 2SC4081F has 2 features.The first one is low Cob. Cob = 2.0 pF (Typ.).The second one is complements the 2SA1576A.
      The 2SC4081F has some informations about absolute maximum ratings at Ta = 25.When parameter is junction temperature,symbol is Tj,ratings is +150,unit is °C.When parameter is storage Temperature,symbol is Tstg,ratings is -55~+150,unit is °C.When parameter is collector to base Voltage,symbol is VCBO,ratings is 60,unit is V.When parameter is collector to Emitter Voltage,symbol is VCEO,ratings is 50,unit is V.When parameter is Emitter to Base Voltage,symbol is VEBO,ratings is 7,unit is V.When parameter is Collector Current,symbol is IC,ratings is 150,unit is mA.When parameter is Total Power Dissipation,symbol is PD,ratings is 225,unit is mW.
      The 2SC4081F has some informations about characteristics at Ta = 25.When parameter is collector-base breakdown voltage,symbol is BVCBO,min is 60,unit is V,Test Conditions is IC=50uA.When parameter is collector-base breakdown voltage,symbol is BVCBO,min is 50,unit is V,Test Conditions is IC=1mA.When parameter is Emitter-Base Breakdown Voltage,symbol is BVCBO,min is 7,unit is V,Test Conditions is IE=50uA.When parameter is collector-base breakdown voltage,symbol is ICBO,max is 100,unit is nA,Test Conditions is VCB=60V.When parameter is Emitter-Base Cutoff Current,symbol is IEBO,max is 100,unit is nA,Test Conditions is VEB=7V.When parameter is Collector Saturation Voltage 1,symbol is VCE(sat),max is 400,unit is mV,Test Conditions is IC=50mA, IB=5mA.When parameter is DC Current Gain,symbol is hFE,min is 120,max is 560,Test Conditions is VCE=6V, IC=1mA.When parameter is Gain-Bandwidth Product,symbol is fT,Typ is 180,unit is MHz,Test Conditions is VCE=-12V, IC=2mA, f=100MHz.When parameter is Output Capacitance,symbol is Cob,Typ is 2,max is 3.5,unit is pF,Test Conditions is VCB=-12V, f=1MHz, IE=0.
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