Features: SpecificationsDescription The 2SC3976 is Silicon NPN triple diffusion planar type for high breakdown voltage high-speed switching.The 2SC3976 has 4 features.The first one is high-speed switching.The second one is high collector to base voltage VCBO.The third one is wide area of safe oper...
2SC3976: Features: SpecificationsDescription The 2SC3976 is Silicon NPN triple diffusion planar type for high breakdown voltage high-speed switching.The 2SC3976 has 4 features.The first one is high-speed swi...
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The 2SC3976 is Silicon NPN triple diffusion planar type for high breakdown voltage high-speed switching.The 2SC3976 has 4 features.The first one is high-speed switching.The second one is high collector to base voltage VCBO.The third one is wide area of safe operation (ASO).The fourth one is satisfactory linearity of foward current transfer ratio hFE.
The 2SC3976 has some informations about absolute Maximum Ratings (TC=25°C).When parameter is collector to base voltage,symbol is VCBO,ratings is 800,unit is V.When parameter is collector to base voltage,symbol is VCBO,ratings is 800,unit is V.When parameter is collector to base voltage,symbol is VCEO,ratings is 500,unit is V.When parameter is emitter to base voltage,symbol is VEBO,ratings is 8,unit is V.When parameter is peak collector current,symbol is ICP,ratings is 25,unit is A.When parameter is collector current,symbol is IC,ratings is 12,unit is A.When parameter is collector current,symbol is IB,ratings is 6,unit is A.When parameter is Collector power dissipation TC=25°C,symbol is PC,ratings is 150,unit is W.When parameter is collector power dissipation Ta=25°C,symbol is PC,ratings is 3.5,unit is W.When parameter is junction temperature,symbol is Tj,ratings is 150,unit is °C.When parameter is storage temperature,symbol is Tstg,ratings is 55 to +150,unit is °C.
The 2SC3976 has some informations about electrical characteristics (TC=25°C).When parameter is collector cutoff current,symbol is ICBO,conditions is VCB = 800V, IE = 0,max is 100,unit is A.When parameter is emitter cutoff current,symbol is ICBO,conditions is VEB = 5V, IC = 0,max is 100,unit is A.When parameter is collector to emitter voltage,symbol is VCEO,conditions is IC = 10mA, IB = 0,min is 500,unit is V.When parameter is forward current transfer ratio,symbol is hFE1,conditions is VCE = 5V, IC = 0.1A,min is 15.When parameter is forward current transfer ratio,symbol is hFE2,conditions is VCE = 5V, IC = 7A,min is 8.When parameter is collector to emitter saturation voltage,symbol is VCE(sat),conditions is IC = 7A, IB = 1.4A,max is 1.0,unit is V.When parameter is base to emitter saturation voltage,symbol is VCE(sat),conditions is IC = 7A, IB = 1.4A,max is 1.5,unit is V.