2SC3928A-112-1R

The 2SC3928A-112-1R is designed as one kind of super mini package resin sealed silicon NPN epitaxial transistor that can be used in low frequency amplify applications. Features of this device are:(1)Small collector to emitter saturation voltage: VCE(sat)=0.3V max; (2)Excellent linearity of DC forward gain; (3)Super mini package for easy mounting.

The absolute maximum ratings of the 2SC3928A-112-1R can be summarized as:(1)Collector to Base voltage: 50 V;(2)Collector to Emitter voltage: 50 V;(3)Emitter to Base voltage: 6 V;(4)Collector current: 200 mA;(5)Collector dissipation: 200 mW;(6)Junction temperature: +150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)C to E break down voltage: 50 V;(2)Collector cut off current: 0.1 uA;(3)Emitter cut off current: 0.1 uA;(4)DC forward current gain: 120 to 820;(5)DC forward current gain: 70;(6)C to E Saturation Vlotage: 0.3 V;(7)Gain bandwidth product: 200 MHz;(8)Collector output capacitance: 4 pF;(9)Noise Figure: 15 dB. If you want to know more information such as the electrical characteristics about the 2SC3928A-112-1R, please download the datasheet in www.seekic.com or www.chinaicmart.com.