2SC3709A

The 2SC3709A is designed as toshiba transistor silicon NPN epitaxial planar type for high current switching applications.

It has three features. (1)Low collector saturation voltage which would be 0.4V max. (2)High speed switching time which would be 1.0us typ. (3)Complementary to 2SA1451A. Those are all the main features.

Some absolute maximum ratings of 2SC3709A have been concluded into several points as follow. (1)Its collector to base voltage would be  60V. (2)Its collector to emitter voltage would be 50V. (3)Its emitter to base voltage would be 6V. (4)Its collector current would be 12A. (5)Its base current would be 2A. (6)Its collector power dissipation would be 30W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SC3709A are concluded as follow. (1)Its collector cutoff current would be max 10uA with conditions of Vcb=60V and Ie=0. (2)Its emitter cutoff current would be max 10uA with conditions of Veb=6V and Ic=0. (3)Its DC current gain would be min 70 and max 240 with conditions of Vce=1V and Ic=1A. (4)Its collector to emitter saturation voltage would be typ 0.25V and max 0.4V with conditions of Ic=6A and Ib=0.3A. (5)Its base to emitter voltage would be typ 0.9V and max 1.2V with conditions of Ic=6A and Ib=0.3A. (6)Its collector to emitter breakdown voltage would be min 50V.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information about 2SC3709A please contact us for details. Thank you!