Features: · Adoption of FBET process.· AF amp, AF power amp.· High breakdown voltage : VCEO>80VPinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO ()100 V Collector-emitter voltage VCEO ()80 V Emitter-base volta...
2SC3708: Features: · Adoption of FBET process.· AF amp, AF power amp.· High breakdown voltage : VCEO>80VPinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base volta...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()100 |
V | |
Collector-emitter voltage |
VCEO |
()80 |
V | |
Emitter-base voltage |
VEBO |
()5 |
V | |
Collector current |
Ic |
()500 |
mA | |
Collector Current (Pulse) |
ICP |
()800 |
mA | |
Base Current |
IB |
()100 |
mA | |
Collector Dissipation |
PC |
600 |
mW | |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 80 |
IC [A] | 0.5 |
PC [W] | 0.6 |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 5 |
IC [mA] | 50 |
fT typ [MHz] | 120 |
VCE [V] | 10 |
IC [mA] | 10 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 400 |
IB [mA] | 40 |