2SC3676

The 2SC3676 is designed as one kind of NPN triple diffused planar silicon transistor that can be used in (1)high-voltage amplifiers;(2)high-voltage switching applications;(3)dynamic focus applications. And the features of this device are:(1)high breakdown voltage (VCEO min = 900 V);(2)small cob (cob typ = 5.0 pF);(3)wide ASO (adoption of MBIT process);(4)high reliability (adoption of HVP process).

The absolute maximum ratings of the 2SC3676 can be summarized as:(1)collector-to-base voltage: 1500 V;(2)collector-to-emitter voltage: 900 V;(3)emitter-to-base voltage: 5 V;(4)collector current: 300 mA;(5)collector current (pulse): 1 A;(6)collector dissipation: 20 W;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

The electrical characteristics of the 2SC3676 can be summarized as:(1)collector cutoff current: 10 uA;(2)emitter cutoff current: 10 uA;(3)DC current gain: 30;(4)gain-bandwidth product: 6 MHz;(5)C-E saturation voltage: 5 V;(6)B-E saturation voltage: 2 V;(7)C-B breakdown voltage: 1500 V;(8)C-E breakdown voltage: 900 V;(9)E-B breakdown voltage: 5 V;(10)output capacitance: 5.0 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.