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2SC3649

Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Very small size making it easy to provide highdensity hybrid ICs.PinoutSpecifications Absolute maximum ratings VCBO [V] 180 VCEO [V] 160 IC [A] 1.5 PC [W] 1.5 ...

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SeekIC No. : 004222443 Detail

2SC3649: Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Very small size making it easy to provide highdensity hybrid ICs.PinoutSpecifications ...

2SC3649 Data Sheet

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Part Number:
2SC3649
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Very small size making it easy to provide highdensity hybrid ICs.




Pinout






Specifications

Absolute maximum ratings
VCBO [V] 180
VCEO [V] 160
IC [A] 1.5
PC [W] 1.5
Electrical characteristics
hFE min 100
hFE max 400
VCE [V] 5
IC [mA] 100
fT typ [MHz] 120
VCE [V] 10
IC [mA] 50
VCE (sat) typ [V] 0.13
VCE (sat) max [V] 0.45
IC [mA] 500
IB [mA] 50


Parameter
Symbol
 Conditions
Ratings
Unit
Collector-base voltage
VCBO
()180
V
Collector-emitter voltage
VCEO
()160
V
Emitter-base voltage
VEBO
()6
V
Collector current
Ic
()1.5
mA
Collector Current (Pulse)
ICP
()2.5
mA
Collector Dissipation
PC
 Moutned on ceramic board (250mm2´0.8mm)
500
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C





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