Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Fast switching time.· Very small size making it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base volt...
2SC3646: Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Fast switching time.· Very small size making it easy to provide highdensity, small-sized hybrid ICs...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()120 |
V | |
Collector-emitter voltage |
VCEO |
()100 |
V | |
Emitter-base voltage |
VEBO |
()6 |
V | |
Collector current |
Ic |
()1 |
mA | |
Collector Current (Pulse) |
ICP |
()2 |
mA | |
Collector Dissipation |
PC |
Moutned on ceramic board (250mm2´0.8mm) |
500 1.3 |
W |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 100 |
IC [A] | 1 |
PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 5 |
IC [A] | 0.1 |
VCE (sat) typ [V] | 0.1 |
VCE (sat) max [V] | 0.4 |
IC [A] | 0.4 |
IB [mA] | 40 |