Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Absolute maximum ratings VCBO [V] 180 ...
2SC3645: Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, ...
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SpecificationsDescriptionThe 2SC3356 is designed as one kind of microwave low noise amplifier NPN ...
SpecificationsDescriptionThe 2SC3356 R24 is designed as one kind of microwave low noise amplifier ...
Absolute maximum ratings | |
---|---|
VCBO [V] | 180 |
VCEO [V] | 160 |
IC [A] | 0.14 |
PC [W] | 1.3 |
Electrical characteristics | |
---|---|
hFE min | 140 |
hFE max | 400 |
VCE [V] | 5 |
IC [mA] | 10 |
fT typ [MHz] | 150 |
VCE [V] | 10 |
IC [mA] | 10 |
VCE (sat) typ [V] | 0.07 |
VCE (sat) max [V] | 0.3 |
IC [mA] | 50 |
IB [mA] | 5 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()180 |
V | |
Collector-emitter voltage |
VCEO |
()160 |
V | |
Emitter-base voltage |
VEBO |
()5 |
V | |
Collector current |
Ic |
()140 |
mA | |
Collector Current (Pulse) |
ICP |
()200 |
mA | |
Collector Dissipation |
PC1 PC2 |
Moutned on ceramic board (250mm2´0.8mm) |
500 1.3 |
mW |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |