2SC3585-T1B R43

The 2SC3585-T1BR43 is one member of the 2SC3585 family which is designed as the NPN epitaxial silicon transistor that features excellent power gain with very low-noise figures. This device employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values.

The absolute maximum ratings of the 2SC3585-T1BR43 can be summarized as:(1)Collector to Base Voltage: 20 V;(2)Collector to Emitter Voltage: 10 V;(3)Emitter to Base Voltage: 1.5 V;(4)Collector Current: 35 mA;(5)Total Power Dissipation: 200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 1.0 uA;(2)Emitter Cutoff Current: 1.0 uA;(3)DC Current Gain: 50 to 250;(4)Gain Bandwidth Product: 10 GHz;(5)Feed-Back Capacitance: 0.3 to 0.8 pF;(6)Insertion Power Gain: 6.0 to 8.0 dB;(7)Maximum Available Gain: 10 dB;(8)Noise Figure: 1.8 to 3.0 dB. If you want to know more information such as the electrical characteristics about the 2SC3585-T1BR43, please download the datasheet in www.seekic.com or www.chinaicmart.com.