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2SC3576

Features: ` Adoption of FBET process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Application· LF general-purpose amplifiers, various drivers, muting circuit.PinoutSpecifications Absolute maximum ratings ...

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SeekIC No. : 004222402 Detail

2SC3576: Features: ` Adoption of FBET process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Application· LF general-purpose ampli...

2SC3576 Data Sheet

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Part Number:
2SC3576
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

` Adoption of FBET process.
` High DC current gain (hFE=800 to 3200).
` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).
` High VEBO (VEBO15V).




Application

· LF general-purpose amplifiers, various drivers, muting circuit.




Pinout






Specifications

Absolute maximum ratings
VCEO [V] 25
VEBO [V] 15
IC [A] 0.3
PC [W] 0.3
Electrical characteristics
hFE min 800
hFE max 3200
VCE [V] 5
IC [mA] 10
VCE (sat) typ [V] 0.12
VCE (sat) max [V] 0.5
IC [mA] 200
IB [mA] 4


Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 30 V
Collector-to-Emitter Voltage VCEO 25 V
Emitter-to-Base Voltage VEBO 15 V
Collector Current IC 300 mA
Collector Current (Pulse) ICP 500 mA
Base Current IB 60 mA
Collector Dissipation PC 300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C





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