2SC3570

      The 2SC3570 is NPN silicon epitaxial transistor designed for switching regulator,DC-DC converter and high frequency power amplifier application.The 2SC3570 has 3 features including easy mount by eliminating insulation sheet and bushing;low collector saturation voltage;high switching speed.   
      The absolute maximun ratings at Ta=25°C, Collector to Base Voltage VCBO is 500 V;Collector to Emitter Voltage VCEO is 400V;Emitter to Base Voltage VEBO is 8.0 V;Collector Current(DC) IC is 5.0 A;total power dissipation is 25 W;Junction temperature 150°C maxnimum;Storage temperature is -55 to +150°C.
      Diodes Incorporated and its subsidiaries 2SC3570 reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein.Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to holdDiodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
      China integrated circuits,China ICs,China semiconductor,China IGBT,China components,China transistor,China Electronic component,China electronics audio component,China Power Electronics.latest manufacturer factory stock list.Our prices are better than other similiar products.
      The products 2SC3570 shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.   
      No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
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