2SC3567

      The 2SC3567 is NPN silicon epitaxial transistor designed for switching regulator,DC-DC converter and high frequency power amplifier application.The 2SC3567 has 4 features including easy mount by eliminating insulation sheet and bushing;low collector saturation voltage;high switching speed;complementary to 2SA1395.   
      The absolute maximun ratings at Ta=25°C, Collector to Base Voltage VCBO is 150 V;Collector to Emitter Voltage VCEO is 100 V;Emitter to Base Voltage VEBO is 7.0 V;Collector Current(DC) IC is 3.0 A;total power dissipation is 15 W;Junction temperature 150°C maxnimum;Storage temperature is -55 to 150°C.
    2SC3567 shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
      Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein.Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of 2SC3567 in such applications shall assume all risks of such use and will agree to holdDiodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.   
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