2SC3545

SpecificationsDescriptionThe 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature.It is designed ...

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SeekIC No. : 004222387 Detail

2SC3545: SpecificationsDescriptionThe 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small ...

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Part Number:
2SC3545
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Description

The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature.It is designed for use in small type equipments especially recommended for Hybrid Integrated Circuit and other applications.
The 2SC3545 has 3 features including High Gain Bandwidth Procuct; fT = 2 000 MHz TYP; Low Collector to Base Time Constant; CC.rb'b = 4 ps TYP;Low Feedback Capacitance; Cre = 0.48 pF TYP.
The absolute maximun ratings at TA=25°C, Collector to Base Voltage VCBO is 30 V;Collector to Emitter Voltage VCEO is 15 V;Emitter to Base Voltage VEBO is 3.0 V;Collector Current IC is 50 mA;Total Power Dissipation PT is 150 mW.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact an NEC sales representative in advance.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
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The 2SC3545 is designed as the NPN epitaxial silicon transistor that features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. And this device can be used in small type equipments especially recommended for Hybrid Integrated Circuit and other applications. And this device has three points of features: (1)High Gain Bandwidth Procuct; fT = 2 000 MHz TYP; (2)Low Collector to Base Time Constant; CC rbb = 4 ps TYP; (3)Low Feedback Capacitance; Cre = 0.48 pF TYP.

The absolute maximum ratings of the 2SC3545 can be summarized as:(1)Collector to Base Voltage: 30 V;(2)Collector to Emitter Voltage: 15 V;(3)Emitter to Base Voltage: 3.0 V;(4)Collector Current: 50 mA;(5)Total Power Dissipation: 150 mW;(6)Junction Temperature: 125 ;(7)Storage Temperature: -65 to +125 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 0.1 uA;(2)Emitter Cutoff Current: 0.1 uA;(3)DC Current Gain: 50 to 250;(4)Gain Bandwidth Product: 10 GHz;(5)Feed-Back Capacitance: 0.48 to 1.0 pF;(6)Collector to Base Time Constant: 4 to 10 ps. If you want to know more information such as the electrical characteristics about the 2SC3545, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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