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SeekIC No. : 003436949 Detail

2SC3507: TRANS NPN 800VCEO 5A TOP-3F

2SC3507 Data Sheet

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Part Number:: 2SC3507
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Supply Ability:: 5000

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Upload time: 2024/5/22

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Product Details

Quick Details

Series:	-	Manufacturer:	Panasonic Electronic Components - Semiconductor Products
Transistor Type:	NPN	Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	800V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	1.5V @ 600mA, 3A
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	6 @ 3A, 5V	Power - Max:	3W
Frequency - Transition:	6MHz	Mounting Type:	Through Hole
Package / Case:	TOP-3F	Supplier Device Package:	TOP-3F-A1

Description

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Through Hole
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Current - Collector (Ic) (Max): 5A
Power - Max: 3W
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 3A
Frequency - Transition: 6MHz
Voltage - Collector Emitter Breakdown (Max): 800V
Package / Case: TOP-3F
Supplier Device Package: TOP-3F-A1
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 5V

Features:

• High-speed switching
• High collector to base voltage V_CBO
• Satisfactory linearity of forward current transfer ratio h_FE
• Full-pack package which can be installed to the heat sink with one screw

Specifications

Parameter		Symbol	Rating	Unit
Collector to base voltage		V_CBO	1000	V
Collector to emitter voltage		V_CES V_CEO	1000 800	V
Emitter to base voltage		V_EBO	7	V
Peak collector current		I_CP	10	A
Collector current		I_C	5	A
Base current		I_B	3	A
Collector power dissipation	T_C=25°C T_a=25°C	P_C	80 3	W
Junction temperature		T_j	150
Storage temperature		T_stg	−55 to +150

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2SC3507

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