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SeekIC No. : 003436948 Detail

2SC3506: TRANS NPN 800VCEO 3A TOP-3F

2SC3506 Data Sheet

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Part Number:: 2SC3506
Mfg:
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Series:	-	Manufacturer:	Panasonic Electronic Components - Semiconductor Products
Transistor Type:	NPN	Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	800V	Capacitance :	4 pF
Resistor - Base (R1) (Ohms):	-	Vce Saturation (Max) @ Ib, Ic:	1.5V @ 400mA, 2A
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	6 @ 2A, 5V	Power - Max:	3W
Frequency - Transition:	4MHz	Mounting Type:	Through Hole
Package / Case:	TOP-3F	Supplier Device Package:	TOP-3F-A1

Description

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Through Hole
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Current - Collector (Ic) (Max): 3A
Power - Max: 3W
Packaging: Bulk
Frequency - Transition: 4MHz
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max): 800V
Package / Case: TOP-3F
Supplier Device Package: TOP-3F-A1
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 5V

Features:

• High-speed switching
• High collector to base voltage V_CBO
• Satisfactory linearity of forward current transfer ratio h_FE
• Full-pack package which can be installed to the heat sink with one screw

Specifications

Parameter		Symbol	Rating	Unit
Collector to base voltage		V_CBO V_CES	1 000 1 000	V
Collector to emitter voltage		V_CEO	800	V
Emitter to base voltage		V_EBO	7	V
Peak collector current		I_CP	6	A
Collector current		I_C	3	A
Base current		I_B	2	A
Collector power dissipation	T_C=25°C T_a=25°C	P_C	70 3	W
Junction temperature		T_j	150
Storage temperature		T_stg	−55 to +150

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