Features: · High breakdown voltage : VCEO³200V.· Small reverse transfer capacitance and excellent high-frequnecy characteristics: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.· Adoption of FBET processPinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base volt...
2SC3502: Features: · High breakdown voltage : VCEO³200V.· Small reverse transfer capacitance and excellent high-frequnecy characteristics: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.· Adoption of FBET proces...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-base voltage |
VCBO |
()200 |
V | |
Collector-emitter voltage |
VCEO |
()200 |
V | |
Emitter-base voltage |
VEBO |
()5 |
V | |
Collector current |
Ic |
()100 |
mA | |
Collector Current (Pulse) |
ICP |
()200 |
mA | |
Collector Dissipation |
PC |
Tc=25°C |
1.2 5 |
mW |
Junction temperature |
Tj |
150 |
°C | |
Storage temperature |
Tstg |
-55 to +150 |
°C |
Absolute maximum ratings | |
---|---|
VCBO [V] | 200 |
VCEO [V] | 200 |
IC [A] | 0.1 |
PC [W] | 5 |
Electrical characteristics | |
---|---|
hFE min | 40 |
hFE max | 320 |
VCE [V] | 10 |
IC [mA] | 10 |
fT typ [MHz] | 150 |
VCE [V] | 30 |
IC [mA] | 10 |
VCE (sat) typ [V] | - |
VCE (sat) max [V] | 0.6 |
IC [mA] | 20 |
IB [mA] | 2 |