Features: ` High breakdown voltage and high reliability.` Fast switching speed (tf : 0.1s typ).` Wide ASO.` Adoption of MBIT processPinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1100 V Collector-to-Emitter Voltage VCEO 800 V ...
2SC3458: Features: ` High breakdown voltage and high reliability.` Fast switching speed (tf : 0.1s typ).` Wide ASO.` Adoption of MBIT processPinoutSpecifications Parameter Symbol Conditions Ratings ...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 1100 | V | |
Collector-to-Emitter Voltage | VCEO | 800 | V | |
Emitter-to-Base Voltage | VEBO | 7 | V | |
Collector Current | IC | 3 | A | |
Collector Current (Pulse) | ICP | PW300s, Duty Cycle10% | 10 | A |
Base Current | IB | 1.5 | A | |
Collector Dissipation | PC | Tc=25°C | 80 | W |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 800 |
IC [A] | 3 |
PC Tc=25°C [W] | 80 |
Electrical characteristics | |
---|---|
hFE (1) min | 10 |
hFE (1) max | 40 |
VCE [V] | 5 |
IC [A] | 0.2 |
hFE (2) min | 8 |
VCE [V] | 5 |
IC [A] | 1 |
fT typ [MHz] | 15 |
VCE [V] | 10 |
IC [A] | 0.2 |
tf max [µs] | 0.3 |