2SC3440

      The 2SC3440 is a super silicon NPN epitaxial type transistor designed with high collector current,small VCE(sat).Complemantary with 2Sa1365.It has 5 features including low collector to emitter saturation  voltage VCE(sat)=0.2V typ;excellent linearity of DC forward current gain;super mini package for easy mounting;high collector current ICM=1A;high gain band width product fT=180 MHz typ.
      Absolute Maximum Ratings of 2SC3440 are AT 25 °C,Collector to base voltage VCBO is 25 V;emittter to base voltage VEBO  is 4 V;Collector to emitter voltage VCEO is 20 V;collector current IC is 700 mA.
      Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to holdDiodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
      2SC3440 shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.    
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      Diodes Incorporated products are not authorized for use as critical components in life support devices or systemswithout the expressedwritten approval of the President of Diodes Incorporated.
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