2SC3159

DescriptionThe 2SC3159 is designed as silicon NPN power transistors whose typical application is for switching regulator applications.2SC3159 have three features.The first one is that it would be with TO-220F package.The second one is that it would have high voltage.The third one is that It also h...

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SeekIC No. : 004222209 Detail

2SC3159: DescriptionThe 2SC3159 is designed as silicon NPN power transistors whose typical application is for switching regulator applications.2SC3159 have three features.The first one is that it would be wi...

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Part Number:
2SC3159
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The 2SC3159 is designed as silicon NPN power transistors whose typical application is for switching regulator applications.
2SC3159 have three features.The first one is that it would be with TO-220F package.The second one is that it would have high voltage.The third one is that It also have fast switching speed.That are all its features.
Some absolute maximum ratings of 2SC3159(Ta=25) have been concluded into several points as follow.The first one is about its collector-base voltage which would be 500 V with condition of open emitter.The second one is about its collector-emitter voltage which would be 400 V with condition of open base.The third one is about its emitter-base voltage which would be 7 V with condition of open collector.The fourth one is about its collector current which would be 10 A.The fifth one is about its base current which would be 3.5 A.The sixth one is about its total power dissipation which would be 80 W with condition of Tc=25.The seventh one is about its junction temperature which would be 150 .The eighth one is about its storage temperature which would be from -55 to 150 .The last one is about its collector current-peak which would be 20 A.
Aslo some electrical characteristics about 2SC3159 with condition which would be Tj=25 unless otherwise specified.The first one is about its collector-emitter breakdown voltage which would be 400(min) V with condition of Ic=10mA,Ib=0.The second one is about its collector-base breakdown voltage which would be 500(min) V with condition of Ic=1mA,Ie=0.The third one about its emitter-base breakdown voltage which would be 7(min) V with condition of Ie=1mA,Ic=0.The fourth one is about its collector-emitter saturation voltage which would be 1.0(max) V with condition of Ic=6A,Ib=1.2A.The fifth one is about its base-emitter saturation voltage which would be 1.2(max) V with condition of Ic=6A,Ib=1.2A.The sixth one is about its collector cut-off current 10(max) A with condition of Vcb=400V,Ie=0.The seventh one is about emitter cut-off current which would be 10(max) A with condition of Veb=5V,Ic=0.Theeighth one is about its DC current gain which would be 10(min) with condition of Ic=6A,Vce=5V and would be from 15 to 80 with condition of Ic=1A,Vce=5V.








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