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2SC3133

DescriptionThe 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Features of the 2SC3133 are:(1)high power gain:Gpe 14dB,@f=21MHz,Vcc=12V,Po=13W; (2)emitter ballasted construction for high reliability and good performa...

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SeekIC No. : 004222191 Detail

2SC3133: DescriptionThe 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Features of the 2SC3133 are:(1)high power gain:Gpe 14...

2SC3133 Data Sheet

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2SC3133
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5000

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Upload time: 2024/11/21

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Description



Description

The 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.

Features of the 2SC3133 are:(1)high power gain:Gpe 14dB,@f=21MHz,Vcc=12V,Po=13W; (2)emitter ballasted construction for high reliability and good performances; (3)high ruggedness:the ability withstand infinite VSWR when operated at f=27MHz ,Po=16W,Vcc=16V; (4)intermodulation distortion:IMD -25dB,@f=27MHz,Vcc=12V,Po=13W(PEP); (5)input/output impedance:Zin=1.8-j2.5,Zout=7.0-j3.5,@f=27MHz,Vcc=12V,Po=13W.

The absolute maximum ratings of the 2SC3133 can be summarized as:(1)collector-base voltage:60V; (2)collector-emitter voltage:800V; (3)emitter-base voltage:5V; (4)collector current:6A; (5)junction temperature:150; (6)storage temperature range:-55 ~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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