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2SC3112

Features: • High DC current gain: hFE = 600~3600• High breakdown voltage: VCEO = 50 V• High collector current: IC = 150 mA (max)Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 50 V VCEO Collector to emitter voltage 50 V VEBO Em...

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2SC3112: Features: • High DC current gain: hFE = 600~3600• High breakdown voltage: VCEO = 50 V• High collector current: IC = 150 mA (max)Specifications SYMBOL PARAMETER RATING UNI...

2SC3112 Data Sheet

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Part Number:
2SC3112
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• High DC current gain: hFE = 600~3600
• High breakdown voltage: VCEO = 50 V
• High collector current: IC = 150 mA (max)






Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 50 V
VCEO Collector to emitter voltage 50 V
VEBO Emitter to base voltage 5 V
IC Collector current 150 mA
IB Base current 30 mA
PC Collector power dissipation 400 mW
Tj Junction temperature 125
Tstg Storage temperaturerange -55 to +125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).








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