Features: SpecificationsDescription 2SC3066 is a kind of NPN epitaxial planar silicon transistor which has two unique features: The first one is it is excellent in thermal equilibrium and suited for use in differential amp applications. The second one is its matched pair capability. It can be appl...
2SC3066: Features: SpecificationsDescription 2SC3066 is a kind of NPN epitaxial planar silicon transistor which has two unique features: The first one is it is excellent in thermal equilibrium and suited for...
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2SC3066 is a kind of NPN epitaxial planar silicon transistor which has two unique features: The first one is it is excellent in thermal equilibrium and suited for use in differential amp applications. The second one is its matched pair capability. It can be applied to differential amp , current mirror.
There are some maximum ratings about 2SC3066 when Ta is 25. Collector to base voltage(VCBO) is 130 V. Collector to emitter voltage(VCEO) is 120V. Emitter to base voltage(VEBO) is 5V. Collector current(Ic) is 50 A. Peak collector current(Iop) is 100 mA. Collector power dissipation(Pc) is 200W when Tc is 25. Total dissipation (PT) is 400 mW.Junction temperature(Tj) is 150. Storage temperature range (Tstg) is -55 to 150. Otherwise, there are also some electrical chracteristics about it under the same conditions. Collector cutoff current (ICBO) is 0.1A max when VCB is 80 V and IE is 0.Emitter cut-off current (IEBO) is 0.1A max when VEB is 4 V and Ic is 0. Collector emitter saturation voltage(VCE(sat) ) is 0.5 V max when Ic is 10 A and IB is 1 A. Transition frequency(fT) is 130 MHz typ when VCE is 6 V and Ic is 1 A.Collector output capacitance (Cob) is 1.6 pF typ when VCB is 10 V , IE is 0 and f is 1 MHz.
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