2SC3065

      2SC3065 is a kind of NPN epitaxial planar silicon composite transistor.The typical applications include differential amplifier,current mirror.Here you can get some information about the features.First is excellent in thermal equilibrium and suited for use in first-stage differential amplifier.The second is low noise.The last one is matched pasir capability.
      What comes next is the absolute maximum ratings of 2SC3065 at T_a=25.The V_CBO (Collector-base voltage) is 55 V.The V_CEO (Collector-emitter voltage) is 50 V.The V_EBO (emitter-base voltage) is 5 V.The I_C (Collector Current) is 150 mA and the i_cp (Peak Collector Current) is 300 mA.The I_E (emitter Current) is 500 mA.The P_C (Collector Dissipation) is 200 mW and the P_T (total dissipation) is 400 mW.The T_stg (Storage Temperature Range) is from -55 to +150.The T_J (Junction Temperature) is 150.
      There are the electrical characteristics of 2SC3065 at T_a=25.The maximum I_CBO (collector current) is 0.1A at V_CB=35 V,I_E=0.The maximum I_EBO (emitter-base cutoff current) is 0.1A at V_EB=4 V,I_C=0.The minimum h_FE(DC Current Gain) is 100 and the maximum is 960 at V_CE=6 V,I_C=1 mA.The minimum h_FE (small/large) is 0.85 and the typical is 0.98 at V_CE=6 V,I_C=1 mA.The typical V_BE(large-small) (base to emitter voltage drop) is 1.0 mV and the maximum is 10 mV.The maximum V_CE(sat) (collector to emitter saturation voltage) is 0.5 V at I_C=50 mA,I_B=5 mA.The typical f_T (gain-bandwidth product) is 100 MHz at V_CE=6 V,I_C=1 mA.The typical C_ob (output capacitance) is 2.5 pF at V_CB=10 V,f=1 MHz.The minimum V_(BR)CBO (collector to base breakdown voltage) is 55 V at I_C=10A,I_E=0.The minimum V_(BR)CEO (collector to emitter breakdown voltage) is 50 V at I_C=1 mA,R_BE=.The minimum V_(BR)EBO (emitter to base breakdown voltage) is 5 V at I_E=10 A,I_C=0.The maximum V_NO(ave) (noise level) is 35 mV at V_CC=30 V,I_C=1 mA,Rg=56 k,V_G=77 dB/1kHz.The maximum V_NO(peak) (noise peak level) is 200 mV at V_CC=30 V,I_C=1 mA,Rg=56 k,V_G=77 dB/1kHz.