2SC2878

2SC2878 is a kind of silicon NPN epitaxial type. It is designed for use in muting and switching fields. There are some features as follows. First is high emitter-base voltage: VEBO=25 V (Min). The second is high reverse hFE: reverse hFE=150 (typ) at VCE=-2 V, IC=-4 mA. The last one is low on resistance: RON=1 (Typ) at IB=5 mA.

What comes next is the maximum ratings of 2SC2878. The VCBO (collector-base voltage) is 50 V.  The VCEO (collector-emitter voltage) is 20 V. The VEBO (emitter-base voltage) is 25 V. The IC (DC current) is 300 mA. The IB (base current) is 60 mA. The collector power dissipation is 400 mW. The junction temperature is +125. The storage temperature is from -55 to +125.

The following is the electrical characteristics of 2SC2878(Ta=25). The maximum ICBO (collector cut-off current) is 0.1A at VCB=50 V, IE=0. The maximum IEBO (emitter cut-off current) is 0.1A at VEB=25 V, IC=0. The minimum hFE (DC current gain) is 200 and the maximum is 1200 at VCE=2 V, IC=4 mA. The typical VCE(sat) (collector-emitter saturation voltage) is 0.042 V and the maximum is 0.1 V at IC=30 mA, IB=3 mA. The typical VBE (base-emitter voltage) is 0.61 V at IC=4 mA, VCE=2 V. The typical fT (transition frequency) is 30 MHz at VCE=6.0 V, IE=4 mA. The typical Cob (collector output capacitance) is 4.8 pF and the maximum is 7 pF at VCB=10 V, IE=0, f=1 MHz.