2SC2785

2SC2785 is a kind of NPN silicon transistor which is designed for use in driver stage of AF amplifier and low speed switching. There are some features as follows. First is high voltage: VCEO=50 V min. The second is excellent hFE linearity: hFE1 (0.1 mA)/hFE2 (1.0 mA) 0.92 typ. At last, it is complementary to the NEC 2SA1175 PNP transistor.

What comes next is the maximum ratings of 2SC2785. The VCBO (collector-base voltage) is 60 V.  The VCEO (collector-emitter voltage) is 50 V. The VEBO (emitter-base voltage) is 5 V. The IC (DC current) is 100 mA. The IB (base current) is 20 mA. The maximum total power dissipation is 250 mW at Ta=25. The maximum junction temperature is +150. The storage temperature is from -55 to +150.

The following is the electrical characteristics of 2SC2785(Ta=25). The maximum ICBO (collector cut-off current) is 100 nA at VCB=60 V, IE=0. The maximum IEBO (emitter cut-off current) is 100 nA at VEB=60 V, IC=0. The minimum hFE1 (DC current gain) is 10 and the typical is 185 at VCE=6.0 V, IC=0.1 mA; The minimum hFE2 (DC current gain) is 110, the typical is 200 and the maximum is 600 at VCE=6.0 V, IC=1.0 mA. The typical VCE(sat) (collector-emitter saturation voltage) is 0.15 V and the maximum is 0.3 V at IC=100 mA, IB=10 mA. The typical VBE(sat) (base-emitter saturation voltage) is 0.86 V and the maximum is 1.0 V at IC=100 mA, IB=10 mA. The minimum fT (transition frequency) is 150 MHz, the typical is 250 MHz and the maximum is 450 MHz at VCE=6.0 V, IE=-10 mA.