2SC2734GTR

The 2SC2734GTR is one member of the 2SC2734 family which is designed as the silicon NPN epitaxial device that can be used in UHF frequency converter and Local oscillator, wide band amplifier applications. The absolute maximum ratings of this device can be summarized as:(1)Collector to base voltage: 20 V;(2)Collector to emitter voltage: 11 V;(3)Emitter to base voltage: 3 V;(4)Collector current: 50 mA;(5)Collector power dissipation: 150 mW;(6)Junction temperature: 150 °C;(7)Storage temperature: -55 to +150 °C.

The electrical characteristics of this device can be summarized as:(1)Collector to base breakdown voltage: 20 V;(2)Collector to emitter breakdown voltage: 11 V;(3)Emitter to base breakdown voltage: 3 V;(4)Collector cutoff current: 0.5 uA;(5)Collector to emitter saturation voltage: 0.7 V;(6)DC current transfer ratio: 20 to 200;(7)Gain bandwidth product: 1.4 to 3.5 GHz;(8)Collector output capacitance: 0.9 to 1.5 pF;(9)Conversion gain: 15 dB;(10)Noise figure: 9 dB. If you want to know more information about the 2SC2734GTR, please download the datasheet in www.seekic.com or www.chinaicmart.com .