SpecificationsDescriptionThe 2SC2713-BL is one member of the 2SC2713 family which is designed as the TOSHIBA TOSHIBA transistor silicon NPN epitaxial planar type (PCT process) device that can be used in audio frequency general purpose amplifier applications. Features of this device are:(1)High vol...
2SC2713-BL: SpecificationsDescriptionThe 2SC2713-BL is one member of the 2SC2713 family which is designed as the TOSHIBA TOSHIBA transistor silicon NPN epitaxial planar type (PCT process) device that can be use...
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The 2SC2713-BL is one member of the 2SC2713 family which is designed as the TOSHIBA TOSHIBA transistor silicon NPN epitaxial planar type (PCT process) device that can be used in audio frequency general purpose amplifier applications. Features of this device are:(1)High voltage: VCEO = 120 V;(2)Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.);(3)High hFE: hFE = 200 to 700;(4)Low noise: NF = 1dB (typ.), 10dB (max);(5)Complementary to 2SA1163;(6)Small package.
The absolute maximum ratings of the 2SC2713-BL can be summarized as:(1)Collector-base voltage: 120 V;(2)Collector-emitter voltage: 120 V;(3)Emitter-base voltage: 5 V;(4)Collector current: 100 mA;(5)Base current: 20 mA;(6)Collector power dissipation: 150 mW;(7)Junction temperature: 125 °C;(8)Storage temperature range: -55 to 125 °C.
The electrical characteristics of this device can be summarized as:(1)Collector cut-off current: 0.1 uA;(2)Emitter cut-off current: 0.1 uA;(3)DC current gain: 200 to 700;(4)Reverse transfer capacitance:0.30 pF;(5)Transition frequency: 100 MHz;(6)Collector-base time constant: 30 pF;(7)Noise figure: 1.0 to 10.0 dB. If you want to know more information about the 2SC2713-BL, please download the datasheet in www.seekic.com or www.chinaicmart.com .