2SC2464

      2SC2464 is a kind of silicon NPN epitaxial.The typical applications include UHF amplifier and UHF TV tuner RF amplifier.
      What comes next is the absolute maximum ratings of 2SC2464 at Ta=25.The V_CBO (Collector-base voltage) is 30 V.The V_CEO (Collector-emitter voltage) is 25 V.The V_EBO (emitter-base voltage) is 4 V.The I_C (Collector Current) is 20 mA.The P_C (Collector Dissipation) is 200 mW.The T_stg (Storage Temperature Range) is from -55 to +150.The T_J (Junction Temperature) is 150.
      There are the electrical characteristics of 2SC2464 at T_a=25.The minimum V_(BR)CBO (collector to base breakdown voltage) is 30 V at I_C=10A,I_E=0.The minimum V_(BR)CEO (collector to emitter breakdown voltage) is 25 V at I_C=1 mA,R_BE=.The minimum V_(BR)EBO (emitter to base breakdown voltage) is 4 V at I_E=10A.I_C=0.The minimum h_FE(DC Current Gain) is 30 at V_CE=10 V,I_C=3 mA.The maximum V_CE(sat) (collector to emitter saturation voltage) is 5.0 V at I_C=10 mA,I_B=1 mA.The minimum f_T is 750 MHz and the typical is 900 MHz at V_CE=10 V,I_C=3 mA.The typical C_ob is 0.55 pF and the maximum is 0.8 pF at V_CB=10 V,I_E=0,f=1 MHz.The minimum PG is 14 dB and the typical is 16 dB at V_CB=10 V,I_C=3 mA,f=900 MHz.The typical NF is 4.0 dB and the maximum is 6.0 dB at V_CB=10 V,I_C=3 mA,f=900 MHz.The minimum V_AGC (VGC voltage) is 3.5 V and the maximum is 4.8 V at V_CB=10 V,GB=30 dB,f=900 MHz.