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2SC2458L

Application• High current capability: IC = 150 mA (max)• High DC current gain: hFE = 70~700• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)• Low noise: NF (2) = 0.2dB (typ.), 3dB (max)• Complementary to 2SA1048 (L).• Small package.Speci...

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2SC2458L: Application• High current capability: IC = 150 mA (max)• High DC current gain: hFE = 70~700• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)• Low noi...

2SC2458L Data Sheet

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Part Number:
2SC2458L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• High current capability: IC = 150 mA (max)
• High DC current gain: hFE = 70~700
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
• Complementary to 2SA1048 (L).
• Small package.


Specifications

Characteristics Symbol Rating Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 50 V
Emitter to base voltage VEBO 5 V
Collector Current IC 150 mA
Base current IB 50 mA
Collector power dissipation PC 200 mW
Junction Temperature Tj 125
Storage Temperature Range Tstg -55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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