DescriptionThe 2SC2411KRLT1G is one member of the 2SC2411 family which is designed as the medium power transistor (32V, 0.5A) with structure of epitaxial planar type and NPN silicon transistor. Features of the 2SC2411KRLT1G are:(1)Complements the 2SA1036K;(2)Low saturation complements the 2SA1036K...
2SC2411KRLT1G: DescriptionThe 2SC2411KRLT1G is one member of the 2SC2411 family which is designed as the medium power transistor (32V, 0.5A) with structure of epitaxial planar type and NPN silicon transistor. Feat...
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The 2SC2411KRLT1G is one member of the 2SC2411 family which is designed as the medium power transistor (32V, 0.5A) with structure of epitaxial planar type and NPN silicon transistor. Features of the 2SC2411KRLT1G are:(1)Complements the 2SA1036K;(2)Low saturation complements the 2SA1036K.;(3)High ICMax 0.5 A.
The absolute maximum ratings of the 2SC2411KRLT1G can be summarized as:(1)Collector - Base Voltage: 40 V;(2)Collector - Emitter Voltage: 32 V;(3)Emitter - Base Voltage: 5 V;(4)Collector Current DC: 500 mA;(5)Peak Collector Current: 500 mA;(6)Total Power Dissipation: 200 mW;(7)Storage Temperature: -55 to +150 ;(8)Junction Temperature: +150 ;(9)Operating Ambient Temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)Collector Cut-off Current: 1 uA;(2)Emitter Cut-off Current: 1 uA;(3)DC Current Gain: 120 to 390;(4)Collector-Emitter Saturation Voltage: 0.6 V;(5)Base-Emitter Saturatio Voltage: 5 V;(6)Output Collector Capacitance: 6.5 pF;(7)Transition Frequency: 250 MHz. If you want to know more information about the 2SC2411KRLT1G, please download the datasheet in www.seekic.com or www.chinaicmart.com .