Features: ·Power dissipation: PCM=200mWApplication·NPN Silicon Epitaxial Planar TransistorSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 32 V VEBO Emitter to base voltage 5 V IC ...
2SC2411: Features: ·Power dissipation: PCM=200mWApplication·NPN Silicon Epitaxial Planar TransistorSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V ...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage | 40 | V |
VCEO | Collector to emitter voltage | 32 | V |
VEBO | Emitter to base voltage | 5 | V |
IC | Collector current | 500 | mA |
PC | Collector dissipation | 200 | mW |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -55 to +150 |