2SC2240

Application`Low noise : NF = 4dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 k, VCE= 6 V, IC= 100 A, f = 1 kHz `Low pulse noise: Low 1/f noise `High DC current gain: hFE = 200~700 `High breakdown voltage: VCEO = 120 V Specifications Characteristic Symbo...

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2SC2240 Picture
SeekIC No. : 004221824 Detail

2SC2240: Application`Low noise : NF = 4dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 k, VCE= 6 V, IC= 100 A, f = 1 kHz `Low pulse noise: Low 1/f noise `High DC current gain...

floor Price/Ceiling Price

Part Number:
2SC2240
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Application

`Low noise : NF = 4dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 k, VCE= 6 V, IC= 100 A, f = 1 kHz
`Low pulse noise: Low 1/f noise
`High DC current gain: hFE = 200~700
`High breakdown voltage: VCEO = 120 V



Specifications

Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
120
120
5
100
20
300
125
-55~125
V
V
V
mA
mA
mW


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


Description

The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers.




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