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2SC2229

Application·High breakdown voltage: VCEO= 150 V (min) ·Low output capacitance: Cob= 5.0 pF (max) ·High transition frequency: fT= 120 MHz (typ.) Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO...

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2SC2229: Application·High breakdown voltage: VCEO= 150 V (min) ·Low output capacitance: Cob= 5.0 pF (max) ·High transition frequency: fT= 120 MHz (typ.) Specifications Characteristics Symbol R...

2SC2229 Data Sheet

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Part Number:
2SC2229
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5000

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Upload time: 2024/12/25

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Product Details

Description



Application

·High breakdown voltage: VCEO= 150 V (min)
·Low output capacitance: Cob= 5.0 pF (max)
·High transition frequency: fT= 120 MHz (typ.)





Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
20
mA
Collector power dissipation
PC
800
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to 150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and invidual reliability data (i.e. reliability test report
and estimated failure rate, etc).






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