2SC2229 Selling Leads, Price trend, 2SC2229 DataSheet download, circuit diagram from SeekIC.com

Application·High breakdown voltage: VCEO= 150 V (min) ·Low output capacitance: Cob= 5.0 pF (max) ·High transition frequency: fT= 120 MHz (typ.) Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO...

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SeekIC No. : 004221813 Detail

2SC2229: Application·High breakdown voltage: VCEO= 150 V (min) ·Low output capacitance: Cob= 5.0 pF (max) ·High transition frequency: fT= 120 MHz (typ.) Specifications Characteristics Symbol R...

2SC2229 Data Sheet

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Part Number:: 2SC2229
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Description

Application

·High breakdown voltage: VCEO= 150 V (min)
·Low output capacitance: Cob= 5.0 pF (max)
·High transition frequency: fT= 120 MHz (typ.)

Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	V_CBO	200	V
Collector-emitter voltage	V_CEO	150	V
Emitter-base voltage	V_EBO	5	V
Collector current	I_C	50	mA
Base current	I_B	20	mA
Collector power dissipation	P_C	800	mW
Junction temperature	T_j	150
Storage temperature range	T_stg	-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and invidual reliability data (i.e. reliability test report
and estimated failure rate, etc).

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